Samsung Electronics Co., Ltd. today announced the development of 1 gigabit (Gb) mobile DRAM with a wide I/O interface, using 50 nanometer class* process technology. The new wide I/O mobile DRAM will ...
Given the voracious memory bandwidth and capacity demands of Gen AI and other advanced workloads, we’ve seen a rapid progression through the generations of DDR5 memory. Multiplexed Registered DIMMs ...
Rambus Inc. has announced the introduction of its memory controller interface solution for industry-standard DDR3 DRAM. The fully integrated hard macro cell provides the physical layer (PHY) interface ...
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