Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.
TL;DR: Samsung is advancing its next-gen HBM4 memory by preparing for 1c DRAM mass production at its Pyeong Plant 4, with equipment installation starting in Q1 2025. The 1c DRAM, a 6th generation 10nm ...
TL;DR: SK hynix has improved its 1c DRAM yields from 60% to over 80%, focusing on HBM for AI GPUs. The company developed the first 1c process-based 16GB DDR5 DRAM and will lead in mass-producing HBM4 ...
Samsung Electronics has set its sights on becoming the frontrunner in the emerging field of 3D DRAM memory, according to a report from Semiconductor Engineering. This announcement, made at the Memcon ...
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3D X-DRAM aims for 10x capacity of today's memory — NEO Semiconductor's memory has up to 512 Gb per module
NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...
512GB DRAM sounds huge, but don’t hold your breath for consumer availability NEO’s 3D X-DRAM stacks layers sky-high, but price and practicality remain unclear AI and enterprise systems will get the ...
Brace yourself for the latest update to the memory supply crisis. And it's not good news. Not at all. Samsung and SK Hynix, who together are responsible for 70% of the DRAM market, have signalled ...
The big picture: Persistent memory has long been anticipated to bring a paradigm shift in computing, but it's unlikely to happen anytime soon. In a recent webinar, industry insiders from the Storage ...
Forbes contributors publish independent expert analyses and insights. This is the second in a set of four blogs about projections for digital storage and memory for the following year that we have ...
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