Electron transport in gallium nitride (GaN) and zinc oxide (ZnO) remains a field of intense study due to the promise these wide energy gap semiconductors hold for high-power, high-frequency and ...
The next generation of energy-efficient power electronics, high-frequency communication systems, and solid-state lighting, rely on materials known as wide bandgap semiconductors. Circuits based on ...
Scientists have advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. The team created the high electron ...
(Nanowerk News) A team of researchers at the University of Illinois at Urbana-Champaign has advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the ...
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