Researchers developed high precision chips and a new measuring adapter enabling simultaneous contact with eight electrode ...
< Chip AX1580 (15×15 mm²) features 8 gold interddigital electrode pairs, 10 mm channel width, and chan ...
Nevertheless, it necessitates a high-density memory array to effectively manage large data volumes. Here, we present a stacked ferroelectric memory array comprised of laterally gated ferroelectric ...
“Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, ...
A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...
A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
The Fraunhofer Institute for Photonic Microsystems IPMS has developed innovative chips that it claims are revolutionising the ...
With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...
A revolution in technology is on the horizon, and it’s poised to change the devices that we use. Under the distinguished leadership of Professor LEE Young Hee, a team of visionary researchers from the ...
A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback