A new methodology to assess the impact of fabrication inherent process variability on 14-nm fin field effect transistor (FinFET) device performance. August 18th, 2021 - By: Coventor A new methodology ...
Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).
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Analog Bits announced the availability of analog and mixed-signal IP design kits for GlobalFoundries’ 12-nm Leading-Performance (12LP) FinFET semiconductor manufacturing process. The IP portfolio ...
Microchip fab plants in the United States can cram billions of data processing transistors onto a tiny silicon chip, but a critical device, in essence a “clock,” to time the operation of those ...
During its 2017 Financial Analyst Day, AMD revealed a bit more information about its future GPU plans. The next Navi GPU will be based on a 7nm manufacturing process. According to a slide shown by ...
Sign-off enabling for 14nm FinFET includes decks for design rule checking with double patterning , layout vs. schematic checking, pattern matching-based verification, litho friendly design, and design ...
Globalfoundries has improved its extreme ultraviolet (EUV) mask yield rate to nearly 65 percent and made progress in its movement to EUV lithography. Company CTO Gary Patton told the assembled throngs ...
A new technique uses standard chip fab methods to fabricate the building block of a timing device, critical to all microprocessors. Currently, this timing device, known as an acoustic resonator, must ...
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