First-of-its-kind bidirectional GaN technology with DC blocking dramatically reduces switch count needed for power conversion topologies Compatible with standard gate drivers Soft- and hard-switching ...
GaN Pioneer Exploring Next Generation Power Conversion Where One Transphorm FQS Can Replace Multiple Silicon Devices Transphorm will prototype the FQS platform using its 650 V GaN technology that ...
A groundbreaking achievement has been made by scientists from the Indian Institute of Science (IISc), who have introduced a completely homegrown gallium nitride (GaN) power switch that is poised to ...
A common question comes up among power-management design engineers these days: “Is it time to switch from silicon power switches to GaN-based ones? Gallium-nitride (GaN) technology offers many ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
The design of an electronic switched-mode power system has always been a complex task, requiring both knowledge and experience. With the appearance of gallium nitride (GaN), this task has even become ...
Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This switch offers high peak power and is designed to replace ...
Gallium nitride (GaN) power semiconductors continue to push the boundaries of high-voltage electronics, as evident at this year’s Applied Power Electronics Conference (APEC) in Long Beach, California.
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced ...
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