Microchip Technology Inc. has announced a portfolio of IGBT 7 devices housed in different packages, offering multiple topologies and current and voltage ranges. Featuring increased power capability, ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...
After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 2024, PARA LIGHT ELECTRONICS CO., LTD. (Referred to as"Para Light" ...
Mitsubishi announced that it has begun shipping samples of two new S1-Series high-voltage IGBT modules rated at 1.7 kV. These two components are useful for large industrial equipment, such as railcars ...
Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers an efficient, affordable solution for drivetrains and accessories. CGD's ...
Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...