Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...

Our 1ED44173/5/6 are the new low side gate driver ICs that integrate over-current protection (OCP), FAULT status output and enable function. This high integration level is excellent for the digitally ...

To achieve the power, performance, and area (PPA) advantages dictated by Moore’s law, transistors have evolved substantially over the years. The development of planar transistors at Fairchild ...

When designing a product portfolio with a wide range of voltage and power requirements, finding a single driver design solution to serve the full portfolio can deliver significant savings in time and ...

The EiceDRIVER 1EDL8011 high-side driver rapidly cuts power to battery-powered devices for system protection in the event of a fault. Details about the EiceDriver 1EDL8011 high-side gate driver for ...

Check out our coverage of APEC 2024. This article is part of the TechXchange: Gallium Nitride (GaN). The GaN FET is becoming widely preferred in power systems such as high-frequency DC-DC converters.