Abstract: In this paper, a GaN HEMT designed LNA with WIN 0. 15um process for 18–27 GHz (K-band) is presented. The LNA adopts a four-stage common-source structure to achieve 22.8-24.8dB gain in the ...
Abstract: This manuscript presents a novel gain-boosted cross-coupled differential amplifier using only n-type amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) technology. The ...
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