Abstract: Wide bandgap (WBG) and ultra-WBG (UWBG) semiconductor devices exhibit superior performance with higher breakdown voltage and lower on-resistance compared to Si-based devices, rendering them ...
Abstract: Two-transistor-zero-capacitor (2T0C) DRAM cell has been proposed and extensively investigated as a memory device for processing-in-memory (PIM) applications. In this two-part article, we ...
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