Tech Xplore

Practical design guidelines for atom-thin oxide transistors enable reliable 3D chip integration

Researchers at National Taiwan University have developed a unified model that explains how thickness, defects, interface ...
Nanowerk

New design guidelines for atom-thin oxide transistors enable reliable 3D chip integration

A new unified model explains how thickness, defects, interface quality, and roughness together control the behavior of ...
Semiconductor Engineering

Research Bits: Mar. 24

This research presents a new dual-gate design strategy that enables stable operation even in nanoscale channels,” said Jae ...
IEEE

Electrical Characterization and Modeling of Amorphous ITO Field-effect Transistors

Abstract: This work systematically investigates the electrical properties and device physics in short-channel indium tin oxide (ITO) field-effect transistors (FETs). A $\mathbf{150-nm-channel-length}$ ...