Abstract: The deep level of n-type donors for diamond limits the development of diamond-based electronics, including bipolar transistors, junction field effect transistors, etc. In this study, ...
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Abstract: In this Letter, we employed atomic layer deposition (ALD) and flash lamp annealing (FLA) to form a wafer-scale ultra-shallow junction (USJ, ~5 nm) in silicon. The deep ultraviolet light is ...