Abstract: Heavy-ion induced latent gate damage (LGD) and single-event leakage current (SELC) related to gate damage in silicon carbide (SiC) power MOSFETs were investigated by experiment and ...
Abstract: Power cycling test (PCT) is a crucial method for evaluating the long-term reliability of SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). Existing studies on the degradation ...
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