RIR’s latest SiC PiN diodes combine efficiency with ruggedness to help designers achieve higher performance without ...
Abstract: An analytical electro-thermal model for multianode Schottky diodes is proposed in this work. By characterizing the self-heating effects, the temperature-dependent parameters including series ...
Abstract: In this article, quasi-vertical and lateral gallium nitride (GaN) Schottky barrier diodes (SBDs) with similar electrical parameters are irradiated with 200-keV protons at different fluences.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results