RIR’s latest SiC PiN diodes combine efficiency with ruggedness to help designers achieve higher performance without ...
Abstract: An analytical electro-thermal model for multianode Schottky diodes is proposed in this work. By characterizing the self-heating effects, the temperature-dependent parameters including series ...
Abstract: X-ray irradiation is performed in order to study the behavior of lateral hetero-junction Schottky diode to help predict the effect of X-ray on recessed gate high electron mobility transistor ...
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