RIR’s latest SiC PiN diodes combine efficiency with ruggedness to help designers achieve higher performance without ...
Abstract: In this article, quasi-vertical and lateral gallium nitride (GaN) Schottky barrier diodes (SBDs) with similar electrical parameters are irradiated with 200-keV protons at different fluences.
Abstract: In this study, we present a novel internal port assignment technique, known as the dual-circuit port (DCP) technique, applied for the design of sub-harmonic mixers utilizing planar Schottky ...
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